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Advanced high speed devices / editors, Michael S. Shur, Paul Maki
(Selected topics in electronics and systems ; v. 51)

データ種別	図書
出版者	Hackensack, N.J. : World Scientific
出版年	c2010
本文言語	英語
大きさ	x, 192 p. : ill. ; 26 cm

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配架場所	請求記号	巻　次	ISBN	資料番号	資料状態	利用注記	コメント	予約・取寄	申込書	仮想書架
書庫2階	TK:7874.7:I33:2010		9789814287869	005673207				予約・取寄		仮想書架	予約・取寄		仮想書架

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内容注記	Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L. F. Eastman and Q. Diduck 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M. S. Shur and R. Gaska Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] Millimeter wave to terahertz in CMOS / K. K. O. S. Sankaran ... [et al.] The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A. V. Sampath ... [et al.] Surface acoustic wave propagation in GaN-on-sapphire under pulsed sub-band ultraviolet illumination / V. S. Chivukula ... [et al.] Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] Monte Carlo simulations of In[subscript 0.75]Ga[subscript 0.25]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J. S. Ayubi-Moak, K. Kalna and A. Asenov The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] MBE growth and characterization of mg-doped III-nitrides on sapphire / X. Chen ... [et al.] Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang and T. P. Chow High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L. F. Eastman InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] 4-nm AlN barrier all binary HFET with SiN[subscript x] gate dielectric / T. Zimmermann ... [et al.] Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T. P. Chow Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T. P. Chow Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M. G. Koebke Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D. P. Urciuoli and V. Veliadis
一般注記	"This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. ... The conference was known as IEEE/Cornell University Confernce on High Performance Devices"-- Preface Includes bibliographical references
著者標目	*IEEE Lester Eastman Conference on High Performance Devices (2008 : Cornell University) Shur, Michael Maki, Paul A., 1956-
件　名	LCSH:Very high speed integrated circuits -- Congresses 全ての件名で検索 LCSH:Semiconductors -- Congresses 全ての件名で検索 LCSH:Transistors -- Congresses 全ての件名で検索 LCSH:Integrated circuits -- Very large scale integration -- Congresses 全ての件名で検索
分　類	DC22:621.3815
巻冊次	ISBN:9789814287869 ; XISBN:9814287865
ISBN	9789814287869

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